Toshiba RN2501(TE85L,F)

底架

表面贴装

安装类型

表面贴装

包装/外壳

SMV-5

引脚数

5

Collector-Emitter Breakdown Voltage

50 V

hFEMin

30

RoHS

Compliant

Number of Elements per Chip

2

Dimensions

2.9 x 1.6 x 1.1mm

Typical Resistor Ratio

1

Package Type

SSOP

Maximum Operating Temperature

+150 °C

Typical Input Resistor

4.7 kΩ

Maximum Collector Emitter Voltage

50 V

Maximum DC Collector Current

100 mA

Minimum DC Current Gain

30

Emitter- Base Voltage VEBO

10 V

Pd - Power Dissipation

300 mW

Transistor Polarity

PNP

DC Collector/Base Gain hfe Min

30

Unit Weight

0.000494 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Peak DC Collector Current

100 mA

Manufacturer

Toshiba

Brand

Toshiba

Maximum Operating Frequency

200 MHz

Collector- Emitter Voltage VCEO Max

50 V

包装

Cut Tape (CT)

系列

RN2501

最高工作温度

150 °C

最小工作温度

-55 °C

子类别

Transistors

最大功率耗散

300 mW

引脚数量

5

极性

PNP

配置

Dual

元素配置

Dual

产品类别

BJTs - Bipolar Transistors - Pre-Biased

晶体管类型

PNP

集电极发射器电压(VCEO)

300 mV

最大集电极电流

100 mA

工作温度范围

- 55 C to + 150 C

最高频率

200 MHz

转换频率

200 MHz

最大击穿电压

50 V

集电极基极电压(VCBO)

50 V

发射极基极电压 (VEBO)

10 V

连续集电极电流

100 mA

产品类别

Bipolar Transistors - Pre-Biased