Toshiba TK49N65W,S1F(S

安装类型

通孔

包装/外壳

TO-247-3

引脚数

3

Continuous Drain Current Id

49.2

Number of Elements per Chip

1

Package Type

TO-247

Maximum Operating Temperature

+150 °C

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

130 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

400 W

Transistor Polarity

N-Channel

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.211644 oz

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Manufacturer

Toshiba

Brand

Toshiba

Qg - Gate Charge

160 nC

Tradename

DTMOSIV

Rds On - Drain-Source Resistance

55 mOhms

RoHS

Details

Typical Turn-Off Delay Time

270 ns

Id - Continuous Drain Current

49.2 A

系列

TK

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

功率耗散

400

上升时间

70 ns

产品类别

MOSFET

信道型

N

产品类别

MOSFET

宽度

5.02mm

高度

20.95mm

长度

15.94mm