Toshiba Semiconductor and Storage RN2313,LF
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RN2313,LF
2541-RN2313,LF
晶体管 - 双极(BJT)- 单,预偏置
SC-70, SOT-323
大陆
立即发货

PB-F BIAS RESISTOR BUILT-IN TRAN
1最小包装量--
RN2313,LF详情
Toshiba Semiconductor and Storage RN2313,LF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SC-70, SOT-323
供应商器件包装
SC-70
厂商
东芝半导体与存储
Package
Tape & Reel (TR)
Product Status
活跃
Current-Collector (Ic) (Max)
100 mA
Transistor Polarity
PNP
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
100 mW
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
120
Unit Weight
0.000212 oz
Typical Input Resistor
47 kOhms
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Peak DC Collector Current
100 mA
Channel Mode
Enhancement
Manufacturer
Toshiba
Brand
Toshiba
Maximum DC Collector Current
100 mA
Maximum Operating Frequency
200 MHz
RoHS
Details
Collector- Emitter Voltage VCEO Max
50 V
系列
-
包装
切割胶带
子类别
Transistors
配置
Single
功率 - 最大
100 mW
产品类别
BJTs - Bipolar Transistors - Pre-Biased
晶体管类型
PNP - Pre-Biased
最小直流增益(hFE)@ Ic, Vce
120 @ 1mA, 5V
最大集极截止电流
100nA (ICBO)
不同 Ib, Ic 时 Vce 饱和度(最大值)
300mV @ 250μA, 5mA
电压 - 集射极击穿(最大值)
50 V
频率转换
200 MHz
电阻基(R1)
47 kOhms
连续集电极电流
100
产品类别
Bipolar Transistors - Pre-Biased
RN2313,LF拓展信息
Toshiba Semiconductor and Storage
Toshiba
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage







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