Toshiba Semiconductor and Storage TDTA143E,LM
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TDTA143E,LM
2541-TDTA143E,LM
晶体管 - 双极(BJT)- 单,预偏置
TO-236-3, SC-59, SOT-23-3
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PB-F BIAS RESISTOR BUILT-IN TRAN
1最小包装量--
TDTA143E,LM详情
Toshiba Semiconductor and Storage TDTA143E,LM重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-236-3, SC-59, SOT-23-3
供应商器件包装
SOT-23-3
厂商
东芝半导体与存储
Package
Tape & Reel (TR)
Product Status
活跃
Current-Collector (Ic) (Max)
100 mA
Pd - Power Dissipation
320 mW
Transistor Polarity
PNP
Typical Input Resistor
4.7 kOhms
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Peak DC Collector Current
100 mA
Channel Mode
Enhancement
Manufacturer
Toshiba
Brand
Toshiba
Maximum DC Collector Current
100 mA
Collector- Emitter Voltage VCEO Max
50 V
系列
-
包装
切割胶带
子类别
Transistors
配置
Single
功率 - 最大
320 mW
产品类别
BJTs - Bipolar Transistors - Pre-Biased
晶体管类型
PNP - Pre-Biased
最小直流增益(hFE)@ Ic, Vce
30 @ 10mA, 5V
最大集极截止电流
500nA
不同 Ib, Ic 时 Vce 饱和度(最大值)
300mV @ 500μA, 10mA
电压 - 集射极击穿(最大值)
50 V
频率转换
250 MHz
电阻基(R1)
4.7 kOhms
连续集电极电流
100 mA
产品类别
Bipolar Transistors - Pre-Biased
TDTA143E,LM拓展信息
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage







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