Toshiba Semiconductor and Storage TK2R4E08QM,S1X

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220

厂商

东芝半导体与存储

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

300W (Tc)

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

300 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

-

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

178 nC

Rds On - Drain-Source Resistance

2.44 mOhms

Id - Continuous Drain Current

120 A

系列

U-MOSX-H

操作温度

175°C

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.44mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

3.5V @ 2.2mA

输入电容(Ciss)(Max)@Vds

13000 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

178 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

场效应管特性

-