Toshiba Semiconductor and Storage TK4A80E,S4X

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

供应商器件包装

TO-220SIS

厂商

东芝半导体与存储

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 400μA

Power Dissipation (Max)

35W (Tc)

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

55 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

35 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Toshiba

Brand

Toshiba

Qg - Gate Charge

15 nC

Tradename

MOSVIII

Rds On - Drain-Source Resistance

3.5 Ohms

RoHS

Details

Typical Turn-Off Delay Time

75 ns

Id - Continuous Drain Current

4 A

系列

-

操作温度

150°C

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.5Ohm @ 2A, 10V

输入电容(Ciss)(Max)@Vds

650 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

15 nC @ 10 V

上升时间

25 ns

漏源电压 (Vdss)

800 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET