Toshiba Semiconductor and Storage TPCF8B01(TE85L,F,M

安装类型

表面贴装

包装/外壳

8-SMD, Flat Lead

Current - Continuous Drain (Id) @ 25℃

2.7A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Power Dissipation (Max)

330mW Ta

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.2V @ 200μA

操作温度

150°C TJ

包装

Tape & Reel (TR)

系列

U-MOSIII

已出版

2003

零件状态

Obsolete

湿度敏感性等级(MSL)

1 (Unlimited)

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

110m Ω @ 1.4A, 4.5V

输入电容(Ciss)(Max)@Vds

470pF @ 10V

门极电荷(Qg)(最大)@Vgs

6nC @ 5V

漏源电压 (Vdss)

20V

Vgs（最大值）

±8V

场效应管特性

Schottky Diode (Isolated)