Toshiba Semiconductor and Storage TW048N65C,S1F

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247

厂商

东芝半导体与存储

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5V @ 1.6mA

Power Dissipation (Max)

132W (Tc)

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

69 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

132 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 25 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Toshiba

Brand

Toshiba

Qg - Gate Charge

41 nC

Rds On - Drain-Source Resistance

65 mOhms

RoHS

Details

Typical Turn-Off Delay Time

68 ns

Id - Continuous Drain Current

40 A

系列

-

操作温度

175°C

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

65mOhm @ 20A, 18V

输入电容(Ciss)(Max)@Vds

1362 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

41 nC @ 18 V

上升时间

43 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

+25V, -10V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET