TT Electronics 2N2222ADCSM-QR-EB

包装/外壳

TO-18-3

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

500 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

100 at 150 mA, 10 V

Collector-Emitter Saturation Voltage

1 V

Minimum Operating Temperature

- 65 C

Mounting Styles

通孔

Gain Bandwidth Product fT

300 MHz

Collector- Emitter Voltage VCEO Max

40 V

技术

Si

配置

Single

集电极基极电压(VCBO)

75 V