TT Electronics BCY70-QR

包装/外壳

TO-18-3

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

350 mW

Transistor Polarity

PNP

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

100 at - 10 mA, 1 V

Collector-Emitter Saturation Voltage

1.2 V

Minimum Operating Temperature

- 65 C

Mounting Styles

通孔

Gain Bandwidth Product fT

250 MHz

Collector- Emitter Voltage VCEO Max

40 V

技术

Si

配置

Single

集电极基极电压(VCBO)

50 V