TT Electronics 2N6798

包装/外壳

TO-39-3

Vds - Drain-Source Breakdown Voltage

200 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

25 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

-

Rds On - Drain-Source Resistance

400 mOhms

Id - Continuous Drain Current

5.5 A

技术

Si

通道数量

1 Channel