UMW(Youtai Semiconductor Co., Ltd.) 30N06
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30N06
2436-30N06
晶体管 - FET,MOSFET - 单个
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60V 30A 29mΩ@15A,10V 55W 2.5V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
1最小包装量--
30N06详情
UMW(Youtai Semiconductor Co., Ltd.) 30N06重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
60V
Drain Source On Resistance (RDS(on)@Vgs,Id)
29mΩ@15A,10V
Power Dissipation (Pd)
55W
Gate Threshold Voltage (Vgs(th)@Id)
2.5V@250uA
Input Capacitance (Ciss@Vds)
1.562nF@25V
Total Gate Charge (Qg@Vgs)
25nC@10V
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
30A
30N06拓展信息
Taiwan Semiconductor
Taiwan Semiconductor
Taiwan Semiconductor
Taiwan Semiconductor
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
Taiwan Semiconductor
Taiwan Semiconductor
Taiwan Semiconductor
Taiwan Semiconductor








哦! 它是空的。