Unisonic Technologies Co Ltd 2N65G-TM3-T
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2N65G-TM3-T
2878-2N65G-TM3-T
晶体管 - 特殊用途
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Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE PACKAGE-3
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2N65G-TM3-T详情
Unisonic Technologies Co Ltd 2N65G-TM3-T重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Contact plating
gold-plated
表面安装
NO
Number of pins
10
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
SMT
Connector pinout layout
1x10
Gross weight
0.57 g
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
UNISONIC TECHNOLOGIES CO LTD
Part Package Code
TO-251
Package Description
HALOGEN FREE PACKAGE-3
Drain Current-Max (ID)
2 A
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Operating temperature
-40...163°C
ECCN 代码
EAR99
端子位置
SINGLE
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
Current rating
3A
时间@峰值回流温度-最大值(s)
未说明
引脚数量
3
JESD-30代码
R-PSIP-T3
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-251
漏极-源极导通最大电阻
5 Ω
脉冲漏极电流-最大值(IDM)
8 A
DS 击穿电压-最小值
650 V
雪崩能量等级(Eas)
140 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
28 W
Rated voltage
150V
个人资料
beryllium copper
Plating thickness
0.75µm
Flammability rating
UL94V-0
2N65G-TM3-T拓展信息
Unisonic Technologies Co Ltd
Unisonic Technologies Co Ltd
Unisonic Technologies Co Ltd
Unisonic Technologies Co Ltd
Unisonic Technologies Co Ltd
Unisonic Technologies Co Ltd
Unisonic Technologies Co Ltd
Unisonic Technologies Co Ltd
Unisonic Technologies Co Ltd
Unisonic Technologies Co Ltd








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