UnitedSiC UF3C120150B7S

安装类型

表面贴装

包装/外壳

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

供应商器件包装

D2PAK-7

厂商

UnitedSiC

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Power Dissipation (Max)

136W (Tc)

Vds - Drain-Source Breakdown Voltage

1.2 kV

Moisture Sensitive

有

Typical Turn-On Delay Time

32 ns

Vgs th - Gate-Source Threshold Voltage

4.4 V

Pd - Power Dissipation

136 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

UnitedSiC

Brand

UnitedSiC

Qg - Gate Charge

25.7 nC

Tradename

SiC FET

Rds On - Drain-Source Resistance

150 mOhms

RoHS

Details

Typical Turn-Off Delay Time

32 ns

Id - Continuous Drain Current

17 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

180mOhm @ 5A, 12V

不同 Id 时 Vgs(th)（最大值）

5.5V @ 10mA

输入电容(Ciss)(Max)@Vds

738 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

25.7 nC @ 12 V

上升时间

6 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±25V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

超级交界处

产品类别

MOSFET