UnitedSiC UF3SC120016K4S

安装类型

通孔

包装/外壳

TO-247-4

供应商器件包装

TO-247-4

厂商

UnitedSiC

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

107A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

6V @ 10mA

Power Dissipation (Max)

517W (Tc)

Base Product Number

UF3SC120016

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

4 V

Qualification

AEC-Q101

Pd - Power Dissipation

517 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

UnitedSiC

Brand

UnitedSiC

Qg - Gate Charge

218 nC

Tradename

SiC FET

Rds On - Drain-Source Resistance

21 mOhms

RoHS

Details

Id - Continuous Drain Current

107 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

21mOhm @ 50A, 12V

输入电容(Ciss)(Max)@Vds

7824 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

218 nC @ 15 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET