UnitedSiC UF4C120053K3S

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247-3

厂商

UnitedSiC

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Power Dissipation (Max)

263W (Tc)

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

6 V

Pd - Power Dissipation

263 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Depletion

Manufacturer

UnitedSiC

Brand

UnitedSiC

Qg - Gate Charge

37.8 nC

Rds On - Drain-Source Resistance

67 mOhms

RoHS

Details

Id - Continuous Drain Current

34 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

67mOhm @ 20A, 12V

不同 Id 时 Vgs(th)（最大值）

6V @ 10mA

输入电容(Ciss)(Max)@Vds

1370 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

37.8 nC @ 15 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET