VBsemi Elec IPB120N04S4-02-VB

RoHS

true

Drain Source Voltage (Vdss)

40V

Power Dissipation (Pd)

200W

Gate Threshold Voltage (Vgs(th)@Id)

2.5V@250uA

Reverse Transfer Capacitance (Crss@Vds)

450pF@20V

Input Capacitance (Ciss@Vds)

9000pF@20V

Total Gate Charge (Qg@Vgs)

120nC@10V

Package

Tube-packed

操作温度

-55℃~+150℃

类型

1 N-channel

Continuous Drain Current (Id)

150A