VBsemi Elec SI4890BDY-T1-E3-VB

RoHS

true

Drain Source Voltage (Vdss)

20V

Power Dissipation (Pd)

4.1W

Gate Threshold Voltage (Vgs(th)@Id)

3V@250uA

Reverse Transfer Capacitance (Crss@Vds)

73pF@15V

Input Capacitance (Ciss@Vds)

800pF@15V

Total Gate Charge (Qg@Vgs)

6.8nC@5V

Package

Tape & Reel (TR)

操作温度

-55℃~+150℃@(Tj)

类型

1 N-channel

Continuous Drain Current (Id)

13A