VBsemi Elec SI7742DP-T1-GE3-VB

RoHS

true

Drain Source Voltage (Vdss)

30V

Power Dissipation (Pd)

35W

Drain Source On Resistance (RDS(on)@Vgs,Id)

0.003Ω@10V,32A

Gate Threshold Voltage (Vgs(th)@Id)

2.5V@250uA

Reverse Transfer Capacitance (Crss@Vds)

970pF@15V

Input Capacitance (Ciss@Vds)

3.2nF@15V

Total Gate Charge (Qg@Vgs)

71nC@10V

Package

Tape & Reel (TR)

操作温度

-55℃~+175℃

类型

1 N-channel

Continuous Drain Current (Id)

21A