Vishay U309-E3

表面安装

NO

ECCN (US)

EAR99

Channel Mode

Depletion

Number of Elements per Chip

1

Maximum Gate Source Voltage (V)

-25

Maximum Gate Source Leakage Current (nA)

1

Maximum IDSS (uA)

30000

Maximum Drain Source Resistance (mOhm)

35000(Typ)

Typical Input Capacitance @ Vds (pF)

4@10V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.9@10V

Typical Forward Transconductance (S)

0.014

Maximum Power Dissipation (mW)

500

Typical Power Gain (dB)

16

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

175

Standard Package Name

TO-52

Supplier Package

TO-52

Military

无

Mounting

通孔

Package Height

3.81(Max)

Package Length

5.84(Max)

Package Width

5.84(Max)

PCB changed

3

Package Description

,

Moisture Sensitivity Levels

1

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

U309-E3

Manufacturer

Vishay Intertechnologies

Part Life Cycle Code

Obsolete

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Risk Rank

5.83

JESD-609代码

e3

零件状态

Obsolete

类型

JFET

端子表面处理

Matte Tin (Sn)

子类别

其他晶体管

Reach合规守则

unknown

引脚数量

3

配置

Single

极性/通道类型

N-CHANNEL

信道型

N

场效应管技术

JUNCTION

最大耗散功率(Abs)

0.5 W

RoHS状态

符合RoHS标准