Wuxi NCE Power Semiconductor NCE80H12
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NCE80H12
3125-NCE80H12
晶体管 - FET,MOSFET - 单个
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80V 120A 220W 6mΩ@10V,40A 4V@250uA 1 N-Channel TO-220 MOSFETs ROHS
1最小包装量--
NCE80H12详情
Wuxi NCE Power Semiconductor NCE80H12重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
80V
Power Dissipation (Pd)
220W
Drain Source On Resistance (RDS(on)@Vgs,Id)
6mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)@Id)
4V@250uA
Package
Tube-packed
类型
1 N-Channel
Continuous Drain Current (Id)
120A
NCE80H12拓展信息
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor








哦! 它是空的。