Wuxi NCE Power Semiconductor NCEP02T10
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NCEP02T10
3125-NCEP02T10
晶体管 - FET,MOSFET - 单个
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200V 100A 10mΩ@10V,50A 300W 4.5V@250uA 1 N-Channel TO-220-3L MOSFETs ROHS
1最小包装量--
NCEP02T10详情
Wuxi NCE Power Semiconductor NCEP02T10重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
200V
Drain Source On Resistance (RDS(on)@Vgs,Id)
10mΩ@10V,50A
Power Dissipation (Pd)
300W
Gate Threshold Voltage (Vgs(th)@Id)
4.5V@250uA
Package
Tube-packed
操作温度
-55℃~+175℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
100A
NCEP02T10拓展信息
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor








哦! 它是空的。