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产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	串行总线类型	耐力	写入周期时间 - 最大值	数据保持时间	写入保护	待机电压-最小值	备用内存宽度	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度
GS8161Z18DD-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	2.7, 3.6 V	有	200 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	无	GS8161Z18DD-200I	1048576 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.26	BGA	Industrial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	2.5, 3.3 V	2.3, 3 V	Synchronous	18 Bit	-40 to 85 °C	Tray	GS8161Z18DD			3A991.B.2.B	NBT		FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			INDUSTRIAL	18 Mbit		SYNCHRONOUS	215 mA	6.5@Flow-Through/3@P		1 M x 18		1.4 mm	18		SRAM			18	Industrial	PARALLEL		ZBT SRAM								2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8321Z18AGD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	250 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	3	2000000	PLASTIC/EPOXY	未说明	85 °C	有	GS8321Z18AGD-250	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	BGA	Commercial grade	181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	0 to 85 °C	Tray	GS8321Z18AGD	e1	有	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		OTHER	36 Mbit	2	SYNCHRONOUS	215 mA, 255 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18		1.4 mm	18	21 Bit	SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL		ZBT SRAM								2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8342DT07BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaQuad-II+	N	DDR	Commercial grade				300 MHz	FBGA	QDR	1.8000 V	Synchronous	4 MWords	8 Bit	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	0 to 85 °C	Tray	GS8342DT07BD				SigmaQuad-II+ B4				Memory & Data Storage												36 Mbit	2		530 mA		Pipelined	4 M x 8				20 Bit	SRAM	36 Mbit			Commercial													SRAM
GS8322Z18AGB-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	119	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 70 C	3.6 V	0 C	14	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	BGA, BGA119,7X17,50	网格排列	3	2000000	PLASTIC/EPOXY	BGA119,7X17,50	未说明	4.5 ns	70 °C	有	GS8322Z18AGB-333	333 MHz	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.13	BGA	Commercial grade	222.2@Flow-Through/333@Pipelined MHz	0 to 85 °C	Tray	GS8322Z18AGB	e1	有	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	R-PBGA-B119	不合格	2.5/3.3 V	COMMERCIAL	36 Mbit	2	SYNCHRONOUS	235 mA, 320 mA	4.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.99 mm	18	21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM						2.3 V		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS8160E36DGT-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				150 MHz	TQFP	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	150 MHz	+ 85 C	2.7 V	0 C	18	1.7 V	0 to 70 °C	Tray	GS8160E36DGT				DCD Synchronous Burst				Memory & Data Storage												18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial													SRAM
GS8161Z32DGD-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	512 kWords	32 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	BGA	5.3	GSI TECHNOLOGY	活跃	RECTANGULAR	LBGA	1.8 V	GS8161Z32DGD-250V	有	70 °C	5.5 ns	未说明	PLASTIC/EPOXY	1000000	Commercial grade	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	0 to 85 °C	Tray	GS8161Z32DGD			3A991.B.2.B	NBT		FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			COMMERCIAL	18 Mbit	4	SYNCHRONOUS	225 mA, 245 mA	5.5 ns	Flow-Through/Pipelined	512 k x 32		1.4 mm	32		SRAM	18 Mbit		33554432 bit	Commercial	PARALLEL		ZBT SRAM								2 V	1.7 V	SRAM	15 mm	13 mm
GS8342Q36BGD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Commercial grade				333 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342Q36BGD				SigmaQuad-II				Memory & Data Storage												36 Mbit	2		1.055 A		Pipelined	1 M x 36				19 Bit	SRAM	36 Mbit			Commercial													SRAM
GS8342Q37BD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II+	DDR	Industrial grade				250 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342Q37BD				SigmaQuad-II+ B2				Memory & Data Storage												36 Mbit	2		775 mA		Pipelined	1 M x 36				19 Bit	SRAM	36 Mbit			Industrial													SRAM
GS8162Z36DD-333V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	Commercial grade				200@Flow-Through/333@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	333 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	0 to 85 °C	Tray	GS8162Z36DD				NBT Pipeline/Flow Through				Memory & Data Storage												18 Mbit	4		240 mA, 310 mA	5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial													SRAM
GS8162Z36DB-150IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 85 C	2.7 V	- 40 C	21	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	BGA,	网格排列	512000	PLASTIC/EPOXY	-40 °C	未说明	7.5 ns	85 °C	无	GS8162Z36DB-150IV	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.25	BGA	Industrial grade	133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	-40 to 100 °C	Tray	GS8162Z36DB			3A991.B.2.B	NBT Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		INDUSTRIAL	18 Mbit	4	SYNCHRONOUS	195 mA, 210 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36		1.99 mm	36	19 Bit	SRAM	18 Mbit		18874368 bit	Industrial	PARALLEL		ZBT SRAM								2 V	1.7 V	SRAM	22 mm	14 mm
GS8160E32DGT-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				200 MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	32 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	0 C	18	1.7 V	0 to 70 °C	Tray	GS8160E32DGT				DCD Synchronous Burst				Memory & Data Storage												18 Mbit	4		205 mA, 210 mA	6.5 ns		512 k x 32					SRAM	18 Mbit			Commercial													SRAM
GS842Z18CGB-100I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	7 Weeks	BGA-119	YES	119	119	NBT SRAM	Details	SDR	BGA, BGA119,7X17,50	网格排列	256000	PLASTIC/EPOXY	BGA119,7X17,50	-40 °C	未说明	12 ns	85 °C	有	GS842Z18CGB-100I	100 MHz	262144 words	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	有	100 MHz	+ 85 C	3.6 V	- 40 C	84	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术		Tray	GS842Z18CGB			3A991.B.2.B	NBT Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格	2.5/3.3 V	INDUSTRIAL	4 Mbit		SYNCHRONOUS	130 mA, 130 mA	12 ns		256 k x 18	3-STATE	1.99 mm	18		SRAM		0.045 A	4718592 bit		PARALLEL	COMMON	ZBT SRAM						2.3 V		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS8342T06BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	表面贴装	Parallel	SMD/SMT	1.7 V	0 C	1.9 V	+ 70 C	400 MHz	Commercial grade				400 MHz	FBGA	DDR	1.8000 V	Synchronous	4 MWords	8 Bit	0 to 85 °C																						36 Mbit	1		600 mA		Pipelined	4 M x 8						36 Mbit			Commercial
GS8161Z36DGT-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	100	181.8@Flow-Through/250@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	Industrial grade					-40 to 100 °C																							4				Flow-Through/Pipelined					19 Bit		18 Mbit			Industrial
GS8342Q19BGD-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Industrial grade				200 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	200 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342Q19BGD				SigmaQuad-II+ B2				Memory & Data Storage												36 Mbit	2		565 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Industrial													SRAM
93LC56C-I/PG	Microchip	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	8	8	IN-LINE	128	PLASTIC/EPOXY	DIP8,.3	-40 °C	未说明	85 °C	有	93LC56C-I/PG	2 MHz	128 words	5 V	DIP	RECTANGULAR	Microchip Technology Inc	活跃	MICROCHIP TECHNOLOGY INC	5.25	DIP			DIP, DIP8,.3				e3	有	EAR99		Matte Tin (Sn)		8542.32.00.51	EEPROMs	CMOS	DUAL	THROUGH-HOLE	未说明	1	2.54 mm	compliant	R-PDIP-T8	不合格	3/5 V	INDUSTRIAL			SYNCHRONOUS	0.002 mA			128X16		5.334 mm	16				0.000001 A	2048 bit		SERIAL		EEPROM	MICROWIRE	1000000 Write/Erase Cycles	6 ms	200	SOFTWARE		8	5.5 V	2.5 V		9.271 mm	7.62 mm
GS8161E32DGD-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	32 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	0 to 70 °C	Tray	GS8161E32DGD				DCD Pipeline/Flow Through				Memory & Data Storage												18 Mbit	4		205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 32				19 Bit	SRAM	18 Mbit			Commercial													SRAM
GS816118DD-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 100 C	2.7 V	- 40 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	无	GS816118DD-200IV	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.26	BGA	Industrial grade	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	-40 to 100 °C	Tray	GS816118DD			3A991.B.2.B	同步突发		ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			INDUSTRIAL	18 Mbit	2	SYNCHRONOUS	210 mA, 215 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18		1.4 mm	18		SRAM	18 Mbit		18874368 bit	Industrial	PARALLEL		缓存SRAM								2 V	1.7 V	SRAM	15 mm	13 mm
GS8342D20BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	Commercial grade				400 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342D20BD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	2		705 mA		Pipelined	2 M x 18				19 Bit	SRAM	36 Mbit			Commercial													SRAM
GS816218DGB-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				238@Flow-Through/375@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	375 MHz	+ 85 C	3.6 V	- 40 C	21	2.3 V	-40 to 100 °C	Tray	GS816218DGB				Pipeline/Flow Through				Memory & Data Storage												18 Mbit	2		270 mA, 340 mA	4.2 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Industrial													SRAM
GS816236DGB-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	70 °C	有	GS816236DGB-150	524288 words	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	BGA,	网格排列	512000	PLASTIC/EPOXY	未说明	7.5 ns	5.25	BGA	有	150 MHz	+ 70 C	3.6 V	0 C	21	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR		Tray	GS816236DGB			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119			COMMERCIAL	18 Mbit		SYNCHRONOUS	180 mA, 190 mA	7.5 ns		512 k x 36		1.99 mm	36		SRAM			18874368 bit		PARALLEL		缓存SRAM								2.7 V	2.3 V	SRAM	22 mm	14 mm
GS8342D07BGD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Commercial grade				333 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342D07BGD				SigmaQuad-II+ B4				Memory & Data Storage												36 Mbit	2		605 mA		Pipelined	4 M x 8				20 Bit	SRAM	36 Mbit			Commercial													SRAM
GS8160E18DGT-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				250 MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	0 C	18	1.7 V	0 to 70 °C	Tray	GS8160E18DGT				DCD Synchronous Burst				Memory & Data Storage												18 Mbit	2		205 mA, 225 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Commercial													SRAM
GS832218AD-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 85 C	3.6 V	- 40 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	6.5 ns	85 °C	无	GS832218AD-200I	200 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.11	BGA	Industrial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	-40 to 100 °C	Tray	GS832218AD	e0	无	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	2.5/3.3 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	205 mA, 240 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18	21 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	缓存SRAM						2.3 V		2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8342QT07BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165				300 MHz	FBGA	1.8000 V	1.7 V	Synchronous	8 Bit	1.9 V	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	0 to 85 °C	Tray	GS8342QT07BD				SigmaQuad-II+ B2				Memory & Data Storage												36 Mbit			775 mA	0.45		4 M x 8					SRAM			36														SRAM