GSI Technology GS8160E18DGT-250V

包装/外壳

TQFP-100

引脚数

100

Maximum Clock Rate

250 MHz

Supplier Package

TQFP

Data Rate Architecture

SDR

Typical Operating Supply Voltage

1.8, 2.5 V

Minimum Operating Supply Voltage

1.7, 2.3 V

Timing Type

Synchronous

Number of Words

1 MWords

Number of I/O Lines

18 Bit

Maximum Operating Supply Voltage

2, 2.7 V

Mounting

表面贴装

Moisture Sensitive

有

Maximum Clock Frequency

250 MHz

Maximum Operating Temperature

+ 85 C

Supply Voltage-Max

2.7 V

Minimum Operating Temperature

0 C

Factory Pack QuantityFactory Pack Quantity

18

Supply Voltage-Min

1.7 V

Mounting Styles

SMD/SMT

Interface Type

Parallel

Manufacturer

GSI技术

Brand

GSI技术

Tradename

SyncBurst

RoHS

Details

Memory Types

SDR

Usage Level

Commercial grade

操作温度

0 to 70 °C

系列

GS8160E18DGT

包装

Tray

类型

DCD Synchronous Burst

子类别

Memory & Data Storage

内存大小

18 Mbit

端口的数量

2

电源电流-最大值

205 mA, 225 mA

访问时间

5.5 ns

建筑学

Flow-Through/Pipelined

组织结构

1 M x 18

地址总线宽度

20 Bit

产品类别

SRAM

密度

18 Mbit

筛选水平

Commercial

产品类别

SRAM