GSI Technology GS8160E36DGT-150V

包装/外壳

TQFP-100

Maximum Clock Rate

150 MHz

Supplier Package

TQFP

Data Rate Architecture

SDR

Typical Operating Supply Voltage

2.5, 3.3 V

Minimum Operating Supply Voltage

2.3, 3 V

Timing Type

Synchronous

Number of Words

512 kWords

Number of I/O Lines

36 Bit

Maximum Operating Supply Voltage

2.7, 3.6 V

Mounting

表面贴装

Moisture Sensitive

有

Maximum Clock Frequency

150 MHz

Maximum Operating Temperature

+ 85 C

Supply Voltage-Max

2.7 V

Minimum Operating Temperature

0 C

Factory Pack QuantityFactory Pack Quantity

18

Supply Voltage-Min

1.7 V

Mounting Styles

SMD/SMT

Interface Type

Parallel

Manufacturer

GSI技术

Brand

GSI技术

Tradename

SyncBurst

RoHS

Details

Memory Types

SDR

Usage Level

Commercial grade

操作温度

0 to 70 °C

系列

GS8160E36DGT

包装

Tray

类型

DCD Synchronous Burst

子类别

Memory & Data Storage

引脚数量

100

内存大小

18 Mbit

端口的数量

4

电源电流-最大值

175 mA, 190 mA

访问时间

7.5 ns

建筑学

Flow-Through/Pipelined

组织结构

512 k x 36

地址总线宽度

19 Bit

产品类别

SRAM

密度

18 Mbit

筛选水平

Commercial

产品类别

SRAM