类别是'category.IGBT晶体管模块' (5134)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 安装类型 | 包装/外壳 | 供应商器件包装 | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | 厂商 | 操作温度 | 包装 | 系列 | 子类别 | 技术 | 引脚数量 | 配置 | 输出配置 | 功率耗散 | 输出电流 | 功率 - 最大 | 输入 | 产品类别 | 最大集极截止电流 | 电压 - 集射极击穿(最大值) | 不同 Vge、Ic 时 Vce(on)(最大值) | 连续集电极电流 | IGBT类型 | 电机类型 | NTC热敏电阻 | 输入电容(Cies)@Vce | 产品 | 产品类别 | 高度 | 长度 | 宽度 | ||||||||||||||||||||
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NXH400N100H4Q2F2SG | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | 42-PIM/Q2PACK (93x47) | 1.77V | 409 A, 360 A | + 150 C | - 40 C | 12 | onsemi | onsemi | onsemi | 1000 V | Tray | 活跃 | 409 A | ±20V | 93x47 (SOLDER PIN) (Pb-Free/Halide-Free), PIM44 | 1000 V | 959 W, 805 W | -40°C ~ 175°C (TJ) | - | IGBTs | 三级逆变器 | 959W | 959 W | Standard | IGBT模块 | 500 μA | 1000 V | 2.3V @ 15V, 400A | 409A | 沟渠现场停车 | 有 | 26.093 nF @ 20 V | IGBT硅模块 | IGBT模块 | |||||||||||||||||||
FS13MR12W2M1HPB11BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Tape & Reel (TR) | 活跃 | Infineon Technologies | 18 | FS13MR12W2M1HP_B11 SP005562247 | Infineon | Infineon Technologies | Tray | - | IGBTs | IGBT模块 | IGBT模块 | |||||||||||||||||||||||||||||||||||||||||||
DDB6U134N16RRB38BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO2B | 15 | 底座安装 | DDB6U134N16RR_B38 SP005569287 | Infineon | Infineon Technologies | Infineon Technologies | 35 A | Tape & Reel (TR) | 活跃 | 70 A | 500 W | + 150 C | - 40 C | 150°C (TJ) | Tray | - | Discrete Semiconductor Modules | 单斩波器 | 134 A | 500 W | Standard | Discrete Semiconductor Modules | 500 μA | 1200 V | 2.75V @ 15V, 70A | - | 有 | 5.1 nF @ 25 V | IGBT硅模块 | Discrete Semiconductor Modules | 20.5 mm | 107.5 mm | 45 mm | |||||||||||||||||||
NXH240B120H3Q1PG | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | 32-PIM (71x37.4) | 1.65 | onsemi | Tray | 活跃 | 68 A | 21 | onsemi | onsemi | -40°C ~ 150°C (TJ) | - | Triple, Dual - Common Source | 158 | 158 W | Standard | 400 μA | 1200 V | 2V @ 15V, 80A | 68 | 沟渠现场停车 | 有 | 18.151 nF @ 20 V | onsemi | ||||||||||||||||||||||||||||||
FP100R12N3T4PB81BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Tape & Reel (TR) | 活跃 | Infineon Technologies | 6 | FP100R12N3T4P_B81 SP005351142 | Infineon | Infineon Technologies | Tray | - | IGBTs | IGBT模块 | IGBT模块 | |||||||||||||||||||||||||||||||||||||||||||
FP75R12N2T7B16BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO2B | 75 A | Infineon Technologies | 15 | FP75R12N2T7_B16 SP005354118 | Infineon | Infineon Technologies | Details | Tape & Reel (TR) | 活跃 | -40°C ~ 175°C (TJ) | Tray | IGBTs | 三相逆变器 | 20 mW | 三相桥式整流器 | IGBT模块 | 14 μA | 1200 V | 1.55V @ 15V, 75A | 沟渠现场停车 | 有 | 15.1 nF @ 25 V | IGBT模块 | |||||||||||||||||||||||||||||
NXH200T120H3Q2F2SG | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | 56-PIM/Q2PACK (93x47) | 1.86 | onsemi | Tray | 活跃 | 330 A | 12 | onsemi | onsemi | -40°C ~ 175°C (TJ) | - | 半桥 | 679 | 679 W | Standard | 500 μA | 1200 V | 2.3V @ 15V, 200A | 330 | 沟渠现场停车 | 无 | 35.615 nF @ 25 V | onsemi | ||||||||||||||||||||||||||||||
NXH100B120H3Q0SG | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | 22-PIM/Q0BOOST (55x32.5) | 1.77V | onsemi | Tray | 活跃 | 61 A | ±20V | Case 180AJ (Pb-Free and Halide-Free) Solder Pins | 1200 V | -40°C ~ 150°C (TJ) | - | Discrete Semiconductor Modules | 2 Independent | 186W | 186 W | Standard | 200 μA | 1200 V | 2.3V @ 15V, 50A | 61A | 沟渠现场停车 | 无 | 9.075 nF @ 20 V | Discrete Semiconductor Modules | |||||||||||||||||||||||||||||
NXH200B100H4F2SG | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | F2 | 1.8 V | 100 A | + 150 C | - 40 C | 螺钉安装 | 1 kV | onsemi | Tray | 活跃 | PIM56 | 20 | onsemi | onsemi | 93 W | * | PMIC - Power Management ICs | 开关控制器 | IGBT硅模块 | 开关控制器 | |||||||||||||||||||||||||||||||||||
NXH50M65L4Q1SG | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | 56-PIM (93x47) | 1.56 V | 48 A | Details | 650 V | onsemi | Tray | 活跃 | 48 A | 72 W | + 150 C | - 40 C | 21 | onsemi | onsemi | 175°C (TJ) | Tray | - | IGBTs | 全桥 | 86 W | Standard | IGBT模块 | 300 μA | 650 V | 2.22V @ 15V, 50A | 沟渠现场停车 | 有 | 3.137 nF @ 20 V | IGBT硅模块 | IGBT模块 | ||||||||||||||||||||||
FP75R12N3T7B11BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO3 | 1.55V | 75 A | - 40 C | 10 | FP75R12N3T7_B11 SP005632397 | Infineon | Infineon Technologies | Infineon Technologies | 1200 V | Tray | 活跃 | 75 A | 20V | 1200 V | - | + 175 C | -40°C ~ 175°C (TJ) | Tray | IGBTs | 三相逆变器 | - | 20 mW | 三相桥式整流器 | IGBT模块 | 13 μA | 1200 V | 1.8V @ 15V, 75A | 75A | 沟渠现场停车 | 有 | 15.1 nF @ 25 V | IGBT硅模块 | IGBT模块 | |||||||||||||||||||
FS100R12N2T7B15BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO2B | 1.5V | 100 A | - 40 C | 15 | FS100R12N2T7_B15 SP005551553 | Infineon | Infineon Technologies | Infineon Technologies | 1200 V | Tray | 活跃 | 100 A | 20V | 1200 V | - | + 175 C | -40°C ~ 175°C (TJ) | Tray | IGBTs | 全桥逆变器 | - | 20 mW | Standard | IGBT模块 | 10 μA | 1200 V | 1.8V @ 15V, 100A | 100A | 沟渠现场停车 | 有 | 21.7 nF @ 25 V | IGBT硅模块 | IGBT模块 | |||||||||||||||||||
F3L11MR12W2M1HPB19BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Tape & Reel (TR) | 活跃 | Infineon Technologies | 18 | F3L11MR12W2M1HP_B19 SP005726911 | Infineon | Infineon Technologies | Tray | - | MOSFETs | MOSFET | MOSFET | |||||||||||||||||||||||||||||||||||||||||||
FP150R12N3T7B80BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO3B | 1.55 V | 150 A | 10 | PCB 安装 | FP150R12N3T7_B80 SP005341834 | Infineon | Infineon Technologies | Infineon Technologies | 1200 V | Tape & Reel (TR) | 活跃 | 150 A | 20 V | 20 mW | + 175 C | - 40 C | -40°C ~ 175°C (TJ) | Tray | IGBTs | Si | 三相逆变器 | 20 mW | 三相桥式整流器 | IGBT模块 | 12 μA | 1200 V | 1.55V @ 15V, 150A | 沟渠现场停车 | 有 | 30.1 nF @ 25 V | IGBT硅模块 | IGBT模块 | ||||||||||||||||||||
NXH300B100H4Q2F2SG | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | 53-PIM/Q2PACK (93x47) | 1.8V | 活跃 | onsemi | 73 A | ±20V | 93x47 (SOLDER PIN) (Pb-Free and Halide-Free Solder Pins), Q2BOOST - PIM53 | 1000 V | 12 | onsemi | onsemi | Tray | -40°C ~ 175°C (TJ) | - | Dual, Common Source | 194W | 194 W | Standard | 800 μA | 1118 V | 2.25V @ 15V, 100A | 73A | 沟渠现场停车 | 有 | 6.323 nF @ 20 V | onsemi | |||||||||||||||||||||||||||
VS-GT75YF120UT | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | - | 2.2 V | 118 A | 12 | 螺钉安装 | Vishay | Vishay Semiconductors | Vishay General Semiconductor - Diodes Division | Details | 1.2 kV | Box | 活跃 | 118 A | - 20 V, + 20 V | 431 W | + 150 C | - 40 C | -40°C ~ 150°C (TJ) | Bulk | - | IGBTs | Si | 全桥 | 431 W | Standard | IGBT晶体管 | 100 μA | 1200 V | 2.6V @ 15V, 75A | 沟渠现场停车 | 有 | IGBT晶体管 | |||||||||||||||||||||
IM241L6S1BAUMA1 | Infineon Technologies | 数据表 | 30 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 23-PowerSMD Module, Gull Wing | 23-SOP | 1.15 V | 6 A | - 40 C | 500 | IM241-L6S1B SP005426927 | Infineon | Infineon Technologies | Infineon Technologies | 600 V | 活跃 | IM241L6 | 6A | 1.62 V | 有 | 15 W | + 125 C | -40°C ~ 150°C (TJ) | 切割胶带 | IGBTs | 三相逆变器 | 半桥 | 15 W | Standard | IGBT模块 | 600 V | 1.62V @ 15V, 2A | - | 3-Phase Motor | 有 | IGBT硅模块 | IGBT模块 | |||||||||||||||||||||
MSCGLQ100A65TG | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Bulk | 微芯片技术 | 活跃 | MSCGLQ | 1 | Microchip | 微芯片技术 | Details | * | IGBTs | IGBT模块 | IGBT模块 | |||||||||||||||||||||||||||||||||||||||||||
FMM7G50US60N | Fairchild Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | Module | - | Fairchild Semiconductor | 50 A | Obsolete | Bulk | -40°C ~ 150°C (TJ) | - | 带制动器的三相逆变器 | 139 W | 三相桥式整流器 | 250 μA | 600 V | 2.7V @ 15V, 50A | - | 有 | 3.565 nF @ 30 V | |||||||||||||||||||||||||||||||||||||
FP50R12N2T7B11BPSA2 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO2B | 1.5 V | 50 A | 15 | FP50R12N2T7_B11 SP005597313 | Infineon | Infineon Technologies | Infineon Technologies | Details | 1200 V | Tray | 活跃 | 50 A | FP50R12 | - | + 175 C | - 40 C | -40°C ~ 175°C (TJ) | Tray | IGBTs | 三相逆变器 | 20 mW | 三相桥式整流器 | IGBT模块 | 10 μA | 1200 V | 1.5V @ 15V, 50A | 沟渠现场停车 | 有 | 11.1 nF @ 25 V | IGBT硅模块 | IGBT模块 | |||||||||||||||||||||
NXH50M65L4C2ESG | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 27-PowerDIP Module (1.858", 47.20mm) | 27-DIP | 1.6V | onsemi | 6 | onsemi | onsemi | Details | DIP | Tube | 活跃 | 50 A | -40°C ~ 150°C (TJ) | Tube | - | PMIC - Power Management ICs | 27 | 三相逆变器 | - | 20 mW | 单相桥式整流器 | PFC - Power Factor Correction | 250 μA | 650 V | 2.2V @ 15V, 75A | 50A | - | 有 | 2.608 nF @ 20 V | Power Factor Correction - PFC | ||||||||||||||||||||||||
NXH50M65L4C2SG | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 27-PowerDIP Module (1.858", 47.20mm) | 27-DIP | 1.6V | 50 A | onsemi | onsemi | N | onsemi | 650 V | Tube | 活跃 | 50 A | DIP | - | + 150 C | - 40 C | 6 | -40°C ~ 150°C (TJ) | Tube | - | IGBTs | 27 | 三相逆变器 | - | 20 mW | 单相桥式整流器 | IGBT模块 | 250 μA | 650 V | 2.2V @ 15V, 75A | 50A | - | 有 | 4.877 nF @ 20 V | IGBT硅模块 | IGBT模块 | ||||||||||||||||||
FP75R12N3T4PB81BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Tape & Reel (TR) | 活跃 | Infineon Technologies | 6 | FP75R12N3T4P_B81 SP005352215 | Infineon | Infineon Technologies | Tray | - | IGBTs | IGBT模块 | IGBT模块 | |||||||||||||||||||||||||||||||||||||||||||
FP150R12N3T4PB81BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Tape & Reel (TR) | 活跃 | Infineon Technologies | 6 | FP150R12N3T4P_B81 SP005352218 | Infineon | Infineon Technologies | Tray | - | IGBTs | IGBT模块 | IGBT模块 | |||||||||||||||||||||||||||||||||||||||||||
F3L75R12W1H3PB11BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Tray | Infineon Technologies | 活跃 | 30 | F3L75R12W1H3P_B11 SP005679258 | Infineon | Infineon Technologies | Details | Tray | - | IGBTs | IGBT模块 | IGBT模块 |
NXH400N100H4Q2F2SG
onsemi
分类:Transistors - IGBTs - Modules
FS13MR12W2M1HPB11BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
DDB6U134N16RRB38BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
NXH240B120H3Q1PG
onsemi
分类:Transistors - IGBTs - Modules
FP100R12N3T4PB81BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
FP75R12N2T7B16BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
NXH200T120H3Q2F2SG
onsemi
分类:Transistors - IGBTs - Modules
NXH100B120H3Q0SG
onsemi
分类:Transistors - IGBTs - Modules
NXH200B100H4F2SG
onsemi
分类:Transistors - IGBTs - Modules
NXH50M65L4Q1SG
onsemi
分类:Transistors - IGBTs - Modules
FP75R12N3T7B11BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
FS100R12N2T7B15BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
F3L11MR12W2M1HPB19BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
FP150R12N3T7B80BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
NXH300B100H4Q2F2SG
onsemi
分类:Transistors - IGBTs - Modules
VS-GT75YF120UT
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
IM241L6S1BAUMA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
68.622343
MSCGLQ100A65TG
Microchip Technology
分类:Transistors - IGBTs - Modules
FMM7G50US60N
Fairchild Semiconductor
分类:Transistors - IGBTs - Modules
FP50R12N2T7B11BPSA2
Infineon Technologies
分类:Transistors - IGBTs - Modules
NXH50M65L4C2ESG
onsemi
分类:Transistors - IGBTs - Modules
NXH50M65L4C2SG
onsemi
分类:Transistors - IGBTs - Modules
FP75R12N3T4PB81BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
FP150R12N3T4PB81BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
F3L75R12W1H3PB11BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
