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70P255L65BYGI备选型号: IS42S32400F-6BL

70P255L65BYGI

Integrated Device Technology (IDT)

SRAM Low Power Dual-Port RAM IC

16 Weeks
TFBGA
YES
100
RAM, SDR, SRAM
Bulk
2011
e1
yes
活跃
3 (168 Hours)
100
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
85°C
-40°C
BOTTOM
BALL
260
1
1.8V
0.5mm
30
100
INDUSTRIAL
Parallel
3V
1.8V
16kB
2
0.07mA
65 ns
8KX16
3-STATE
26b
128 kb
0.000008A
COMMON
6mm
6mm
1mm
无
符合RoHS标准
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS42S32400F-6BL

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 90-Pin TFBGA

8 Weeks
90-TFBGA
-
90
Volatile
Tray
-
-
-
活跃
3 (168 Hours)
90
EAR99
-
-
-
BOTTOM
-
-
1
3.3V
0.8mm
-
90
-
-
-
-
128Mb 4M x 32
1
-
5.4ns
4MX32
3-STATE
14b
128 Mb
0.002A
COMMON
13mm
-
-
无
ROHS3 Compliant
-
表面贴装
表面贴装
0°C~70°C TA
AUTO/SELF REFRESH
8542.32.00.02
3V~3.6V
3.3V
3.6V
3V
150mA
166MHz
DRAM
Parallel
32b
32
4096
1248FP
1248
1.2mm
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S32400F-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin WBGA	对比
	70P249L65BYGI	Integrated Device Technology (IDT)	存储器	TFBGA	SRAM Low Power Dual-Port RAM IC	对比
	IS42S32400F-6BL	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 90-Pin TFBGA	对比