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AS4C8M16D1-5TCNTR备选型号: MT46V64M8TG-5B:J

AS4C8M16D1-5TCNTR

Alliance Memory, Inc.

DRAM 128Mb, 3.3V, 200Mhz 8M x 16 DDR

表面贴装
66-TSSOP (0.400, 10.16mm Width)
YES
66
Volatile
0°C~70°C TA
Tape & Reel (TR)
2013
e3/e6
yes
Obsolete
3 (168 Hours)
66
EAR99
PURE MATTE TIN/TIN BISMUTH
AUTO/SELF REFRESH
8542.32.00.02
2.3V~2.7V
DUAL
260
1
2.5V
0.65mm
40
66
2.5V
2.625V
2.375V
128Mb 8M x 16
1
200MHz
700ps
DRAM
Parallel
16b
8MX16
16
15ns
12b
128 Mb
22.22mm
1.2mm
无
符合RoHS标准
-
-
-
-
-
-
-
-
MT46V64M8TG-5B:J

Micron Technology Inc.

DRAM Chip DDR SDRAM 512M-Bit 64Mx8 2.6V 66-Pin TSOP

表面贴装
66-TSSOP (0.400, 10.16mm Width)
YES
66
Volatile
0°C~70°C TA
Bulk
2011
-
-
Obsolete
3 (168 Hours)
66
EAR99
-
AUTO/SELF REFRESH
8542.32.00.28
2.5V~2.7V
DUAL
-
1
2.6V
0.65mm
-
66
2.6V
2.7V
2.5V
512Mb 64M x 8
1
200MHz
700ps
DRAM
Parallel
8b
64MX8
8
15ns
15b
512 Mb
22.22mm
1.2mm
无
Non-RoHS Compliant
3-STATE
0.005A
400MHz
COMMON
8192
248
248
含铅
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43R16800E-5TLI	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM	对比
	IS43R16800E-5TL	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM	对比
	IS43R16160F-6TLI	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP-II	对比