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BSG0810NDIATMA1备选型号: BSG0811NDATMA1

BSG0810NDIATMA1

Infineon Technologies

Trans MOSFET N-CH 25V 50A 8-Pin TISON T/R

26 Weeks
表面贴装
表面贴装
8-PowerTDFN
8
SILICON
19A 39A
-55°C~155°C TJ
Tape & Reel (TR)
OptiMOS™
2013
e3
yes
活跃
1 (Unlimited)
7
Tin (Sn)
2.5W
无铅
未说明
not_compliant
未说明
R-PDSO-N7
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
增强型MOSFET
SOURCE
2.5W
2 N-Channel (Dual) Asymmetrical
3m Ω @ 20A, 10V
2V @ 250μA
无卤素
1040pF @ 12V
8.4nC @ 4.5V
39A
16V
25V
19A
0.004Ohm
160A
30 mJ
METAL-OXIDE SEMICONDUCTOR
Logic Level Gate, 4.5V Drive
ROHS3 Compliant
含铅
-
BSG0811NDATMA1

Infineon Technologies

MOSFET 2N-CH 25V 19A/41A 8TISON

26 Weeks
表面贴装
表面贴装
8-PowerTDFN
8
SILICON
19A 41A
-55°C~150°C TJ
Tape & Reel (TR)
OptiMOS™
2013
-
yes
活跃
1 (Unlimited)
7
-
2.5W
无铅
未说明
not_compliant
未说明
R-PDSO-N7
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
增强型MOSFET
SOURCE
2.5W
2 N-Channel (Dual) Asymmetrical
3m Ω @ 20A, 10V
2V @ 250μA
无卤素
1100pF @ 12V
8.4nC @ 4.5V
41A
-
25V
19A
0.004Ohm
160A
30 mJ
METAL-OXIDE SEMICONDUCTOR
Logic Level Gate, 4.5V Drive
ROHS3 Compliant
含铅
SWITCHING
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