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BSL205NH6327XTSA1备选型号: FDFC2P100

BSL205NH6327XTSA1

Infineon Technologies

Trans MOSFET N-CH 20(Min)V 2.5A 6-Pin TSOP T/R

12 Weeks
表面贴装
表面贴装
SOT-23-6 Thin, TSOT-23-6
SILICON
2
-55°C~150°C TJ
Tape & Reel (TR)
Automotive, AEC-Q101, OptiMOS™
2013
e3
yes
Obsolete
1 (Unlimited)
6
EAR99
Tin (Sn)
雪崩额定
500mW
鸥翼
未说明
未说明
R-PDSO-G6
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
增强型MOSFET
500mW
2 N-Channel (Dual)
50m Ω @ 2.5A, 4.5V
1.2V @ 11μA
无卤素
419pF @ 10V
3.2nC @ 4.5V
2.9ns
2.5A
20V
20V
0.05Ohm
METAL-OXIDE SEMICONDUCTOR
Logic Level Gate, 4.5V Drive
24 pF
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
FDFC2P100

ON Semiconductor

FAIRCHILD SEMICONDUCTOR FDFC2P100 MOSFET Transistor, P Channel, 3 A, -20 V, 150 mohm, -4.5 V, -900 mV

-
表面贴装
表面贴装
SOT-23-6 Thin, TSOT-23-6
-
3A Ta
-55°C~150°C TJ
Tape & Reel (TR)
PowerTrench®
2006
-
-
Obsolete
1 (Unlimited)
-
-
-
-
-
-
-
-
-
-
-
-
P-Channel
150m Ω @ 3A, 4.5V
1.5V @ 250μA
-
445pF @ 10V
4.7nC @ 10V
11ns
3A
12V
-
-
-
Schottky Diode (Isolated)
-
符合RoHS标准
-
6
1.5W
1mA
20V
±12V
11 ns
-900mV
-20V
无SVHC
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	FDC6401N	ON Semiconductor	晶体管 - FET，MOSFET - 阵列	SOT-23-6 Thin, TSOT-23-6	Trans MOSFET N-CH 20V 3A 6-Pin SuperSOT T/R	对比
	FDC6305N	ON Semiconductor	晶体管 - FET，MOSFET - 阵列	SOT-23-6 Thin, TSOT-23-6	ON SEMICONDUCTOR - FDC6305N - DUAL N CHANNEL MOSFET, 20V, SUPER SOT-6	对比
	FDFC2P100	ON Semiconductor	晶体管 - FET，MOSFET - 单个	SOT-23-6 Thin, TSOT-23-6	FAIRCHILD SEMICONDUCTOR FDFC2P100 MOSFET Transistor, P Channel, 3 A, -20 V, 150 mohm, -4.5 V, -900 mV	对比