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BSL205NH6327XTSA1备选型号: IRLMS1902TRPBF

BSL205NH6327XTSA1

Infineon Technologies

Trans MOSFET N-CH 20(Min)V 2.5A 6-Pin TSOP T/R

12 Weeks
表面贴装
表面贴装
SOT-23-6 Thin, TSOT-23-6
SILICON
2
-55°C~150°C TJ
Tape & Reel (TR)
Automotive, AEC-Q101, OptiMOS™
2013
e3
yes
Obsolete
1 (Unlimited)
6
EAR99
Tin (Sn)
雪崩额定
500mW
鸥翼
未说明
未说明
R-PDSO-G6
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
增强型MOSFET
500mW
2 N-Channel (Dual)
50m Ω @ 2.5A, 4.5V
1.2V @ 11μA
无卤素
419pF @ 10V
3.2nC @ 4.5V
2.9ns
2.5A
20V
20V
0.05Ohm
METAL-OXIDE SEMICONDUCTOR
Logic Level Gate, 4.5V Drive
24 pF
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRLMS1902TRPBF

Infineon Technologies

MOSFET N-CH 20V 3.2A 6-TSOP

12 Weeks
表面贴装
表面贴装
SOT-23-6
SILICON
3.2A Ta
-55°C~150°C TJ
Tape & Reel (TR)
HEXFET®
2004
e3
-
活跃
1 (Unlimited)
6
-
Matte Tin (Sn)
HIGH RELIABILITY
-
鸥翼
-
-
R-PDSO-G6
-
增强型MOSFET
-
N-Channel
100m Ω @ 2.2A, 4.5V
700mV @ 250μA
-
300pF @ 15V
7nC @ 4.5V
11ns
3.2A
12V
-
-
-
-
-
ROHS3 Compliant
无铅
3
10Ohm
20V
DUAL
3.2A
Single
1.7W
7 ns
SWITCHING
±12V
4 ns
700mV
20V
700 mV
1.143mm
2.9972mm
1.75mm
无SVHC
无
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