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DMN3032LE-13备选型号: IRLL3303TRPBF

DMN3032LE-13

Diodes Incorporated

MOSFET N-CH 30V 5.6A SOT223

22 Weeks
表面贴装
表面贴装
TO-261-4, TO-261AA
3
SOT-223
5.6A Ta
-55°C~150°C TJ
Cut Tape (CT)
2014
活跃
1 (Unlimited)
150°C
-55°C
DMN3032
Single
2.3 ns
N-Channel
29mOhm @ 3.2A, 10V
2V @ 250μA
498pF @ 15V
11.3nC @ 10V
3.9ns
30V
±20V
1.9 ns
5.6A
20V
498pF
35mOhm
29 mΩ
1.65mm
6.55mm
3.55mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRLL3303TRPBF

Infineon Technologies

MOSFET N-CH 30V 4.6A SOT223

10 Weeks
表面贴装
表面贴装
TO-261-4, TO-261AA
3
-
4.6A Ta
-55°C~150°C TJ
Tape & Reel (TR)
1999
不用于新设计
1 (Unlimited)
-
-
-
Single
7.2 ns
N-Channel
31m Ω @ 4.6A, 10V
1V @ 250μA
840pF @ 25V
50nC @ 10V
22ns
-
±16V
28 ns
4.6A
16V
-
-
-
1.8mm
6.6802mm
3.7mm
ROHS3 Compliant
Tin
SILICON
HEXFET®
e3
4
EAR99
31mOhm
LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
30V
DUAL
鸥翼
260
4.6A
30
R-PDSO-G4
增强型MOSFET
2.1W
DRAIN
SWITCHING
1V
6.5A
30V
30V
98 ns
1 V
无SVHC
无
Contains Lead, Lead Free
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分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IRLL3303TRPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-261-4, TO-261AA	MOSFET N-CH 30V 4.6A SOT223	对比
	ZXM62N03GTA	Diodes Incorporated	晶体管 - FET，MOSFET - 单个	TO-261-4, TO-261AA	MOSFET 30V N-Chnl HDMOS	对比
	FDT439N	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-261-4, TO-261AA	MOSFET N-CH 30V 6.3A SOT-223	对比