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EDB4432BBPA-1D-F-D备选型号: EDB1332BDBH-1DAAT-F-D

EDB4432BBPA-1D-F-D

Micron Technology Inc.

DRAM Chip Mobile LPDDR2 SDRAM 4G-Bit 128Mx32 1.2V/1.8V 168-Pin WFBGA

12 Weeks
Copper, Silver, Tin
表面贴装
表面贴装
168-WFBGA
168
Volatile
-30°C~85°C TC
Bulk
2008
e1
活跃
3 (168 Hours)
168
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
8542.32.00.36
1.14V~1.95V
BOTTOM
260
1
1.2V
0.5mm
30
1.3V
1.14V
4Gb 128M x 32
1
SYNCHRONOUS
DRAM
Parallel
32b
128MX32
32
14b
4 Gb
533MHz
单库页面突发
12mm
0.8mm
ROHS3 Compliant
-
EDB1332BDBH-1DAAT-F-D

Micron Technology Inc.

DRAM Chip LPDDR2 SDRAM 1G-Bit 32Mx32 1.2V 134-Pin FBGA Dry Pack

12 Weeks
Copper, Silver, Tin
表面贴装
表面贴装
134-VFBGA
134
Volatile
-40°C~105°C TC
Bulk
2016
e1
最后一次购买
3 (168 Hours)
134
-
Tin/Silver/Copper (Sn/Ag/Cu)
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
-
1.14V~1.95V
BOTTOM
260
1
1.2V
0.65mm
30
1.3V
1.14V
1Gb 32M x 32
1
SYNCHRONOUS
DRAM
Parallel
32b
32MX32
32
13b
1 Gb
533MHz
多库页面突发
11.5mm
1mm
ROHS3 Compliant
1.2V
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图片	产品型号	品牌	分类	封装	描述	对比
	EDB1332BDBH-1DAAT-F-D	Micron Technology Inc.	存储器	134-VFBGA	DRAM Chip LPDDR2 SDRAM 1G-Bit 32Mx32 1.2V 134-Pin FBGA Dry Pack	对比
	IS43R32800D-5BLI	ISSI, Integrated Silicon Solution Inc	存储器	144-LFBGA	DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM	对比