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EDB4432BBPA-1D-F-D备选型号: IS43R32800D-5BLI

EDB4432BBPA-1D-F-D

Micron Technology Inc.

DRAM Chip Mobile LPDDR2 SDRAM 4G-Bit 128Mx32 1.2V/1.8V 168-Pin WFBGA

12 Weeks
Copper, Silver, Tin
表面贴装
表面贴装
168-WFBGA
168
Volatile
-30°C~85°C TC
Bulk
2008
e1
活跃
3 (168 Hours)
168
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
8542.32.00.36
1.14V~1.95V
BOTTOM
260
1
1.2V
0.5mm
30
1.3V
1.14V
4Gb 128M x 32
1
SYNCHRONOUS
DRAM
Parallel
32b
128MX32
32
14b
4 Gb
533MHz
单库页面突发
12mm
0.8mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
IS43R32800D-5BLI

ISSI, Integrated Silicon Solution Inc

DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM

8 Weeks
-
表面贴装
表面贴装
144-LFBGA
144
Volatile
-40°C~85°C TA
Tray
-
-
活跃
3 (168 Hours)
144
EAR99
-
AUTO/SELF REFRESH
8542.32.00.24
2.3V~2.7V
BOTTOM
-
1
2.5V
0.8mm
-
2.7V
2.3V
256Mb 8M x 32
1
-
DRAM
Parallel
32b
8MX32
32
14b
256 Mb
-
-
12mm
1.4mm
ROHS3 Compliant
144
2.5V
480mA
200MHz
700ps
3-STATE
15ns
0.005A
COMMON
4096
248
248
无
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图片	产品型号	品牌	分类	封装	描述	对比
	EDB1332BDBH-1DAAT-F-D	Micron Technology Inc.	存储器	134-VFBGA	DRAM Chip LPDDR2 SDRAM 1G-Bit 32Mx32 1.2V 134-Pin FBGA Dry Pack	对比
	IS43R32800D-5BLI	ISSI, Integrated Silicon Solution Inc	存储器	144-LFBGA	DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM	对比