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EDW4032BABG-70-F-D备选型号: IS43TR16256AL-125KBLI

EDW4032BABG-70-F-D

Micron Technology Inc.

DRAM Chip GDDR5 SGRAM 4G-Bit 128Mx32 1.35V/1.5V/1.6V 170-Pin FBGA Tray

12 Weeks
Copper, Silver, Tin
表面贴装
表面贴装
170-TFBGA
Volatile
0°C~95°C TC
Tray
2015
Obsolete
3 (168 Hours)
170
EAR99
1.35V
BOTTOM
1
0.8mm
R-PBGA-B170
4Gb 128M x 32
1
1.75GHz
RAM
Parallel
32b
128MX32
32
14b
4 Gb
16
1.3905V
1.3095V
多库页面突发
14mm
1.2mm
无
ROHS3 Compliant
-
-
-
-
-
-
-
IS43TR16256AL-125KBLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin TW-BGA

6 Weeks
Copper, Silver, Tin
表面贴装
表面贴装
96-TFBGA
Volatile
-40°C~95°C TC
Tray
-
活跃
3 (168 Hours)
96
-
1.35V
BOTTOM
1
0.8mm
-
4Gb 256M x 16
1
800MHz
DRAM
Parallel
16b
256MX16
16
18b
4 Gb
-
1.45V
1.283V
-
13mm
1.2mm
无
ROHS3 Compliant
96
e1
Tin/Silver/Copper (Sn/Ag/Cu)
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
261mA
20ns
15ns
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图片	产品型号	品牌	分类	封装	描述	对比
	EDB4432BBPA-1D-F-D	Micron Technology Inc.	存储器	168-WFBGA	DRAM Chip Mobile LPDDR2 SDRAM 4G-Bit 128Mx32 1.2V/1.8V 168-Pin WFBGA	对比
	IS43TR16256A-15HBLI	ISSI, Integrated Silicon Solution Inc	存储器	96-TFBGA	DRAM 4G, 1.5V, 1333Mhz DDR3 SDRAM	对比
	IS43TR16256AL-125KBLI	ISSI, Integrated Silicon Solution Inc	存储器	96-TFBGA	DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin TW-BGA	对比