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FGH40N65UFDTU备选型号: FGH40T65UPD

FGH40N65UFDTU

ON Semiconductor

IGBT 650V 80A 290W TO247

12 Weeks
通孔
通孔
TO-247-3
3
6.39g
SILICON
650V
650V
-55°C~150°C TJ
Tube
2008
yes
活跃
1 (Unlimited)
3
EAR99
低导通损耗
8541.29.00.95
290W
Single
COLLECTOR
Standard
290W
电源控制
N-CHANNEL
650V
80A
45 ns
TO-247AB
69 ns
2.4V @ 15V, 40A
160 ns
场站
120nC
120A
24ns/112ns
1.19mJ (on), 460μJ (off)
20V
6.5V
60ns
20.6mm
15.6mm
4.7mm
无SVHC
无
ROHS3 Compliant
-
-
-
-
-
-
-
FGH40T65UPD

ON Semiconductor

IGBT Transistors 650 V 80 A 268 W

50 Weeks
通孔
通孔
TO-247-3
3
6.39g
SILICON
650V
2.1V
-55°C~175°C TJ
Tube
2013
yes
不用于新设计
1 (Unlimited)
3
EAR99
-
8541.29.00.95
268W
Single
COLLECTOR
Standard
268W
电源控制
N-CHANNEL
650V
80A
43 ns
TO-247AB
57 ns
2.3V @ 15V, 40A
213 ns
沟渠现场停车
177nC
120A
20ns/144ns
1.59mJ (on), 580μJ (off)
20V
7.5V
22ns
20.82mm
15.87mm
4.82mm
-
-
ROHS3 Compliant
ACTIVE, NOT REC (Last Updated: 4 days ago)
Tin
e3
未说明
not_compliant
未说明
无铅
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	FGH40T65UPD	ON Semiconductor	晶体管 - IGBT - 单个	TO-247-3	IGBT Transistors 650 V 80 A 268 W	对比