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IPB055N03LGATMA1备选型号: IRF3707ZSPBF

IPB055N03LGATMA1

Infineon Technologies

Trans MOSFET N-CH 30V 50A 3-Pin(2 Tab) TO-263

12 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
50A Tc
2.2V @ 250μA
2008
-55°C~175°C TJ
Tape & Reel (TR)
OptiMOS™
e3
no
Obsolete
1 (Unlimited)
2
EAR99
Tin (Sn)
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
SINGLE
鸥翼
未说明
未说明
R-PSSO-G2
不合格
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
68W
DRAIN
6.7 ns
N-Channel
SWITCHING
5.5m Ω @ 30A, 10V
3200pF @ 15V
31nC @ 10V
5.2ns
30V
±20V
4 ns
50A
20V
0.0078Ohm
60 mJ
无SVHC
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRF3707ZSPBF

Infineon Technologies

MOSFET N-CH 30V 59A D2PAK

-
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
59A Tc
2.25V @ 25μA
2003
-55°C~175°C TJ
Tube
HEXFET®
e3
-
Discontinued
1 (Unlimited)
2
EAR99
Matte Tin (Sn) - with Nickel (Ni) barrier
-
-
鸥翼
260
30
R-PSSO-G2
-
-
增强型MOSFET
57W
DRAIN
9.8 ns
N-Channel
SWITCHING
9.5m Ω @ 21A, 10V
1210pF @ 15V
15nC @ 4.5V
41ns
-
±20V
3.6 ns
59A
20V
-
40 mJ
无SVHC
ROHS3 Compliant
12.5MOhm
30V
59A
Single
1.8V
42A
30V
30V
59 ns
1.8 V
4.83mm
10.67mm
9.652mm
无
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	IRF3707ZSPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 30V 59A D2PAK	对比
	FDB8896	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 30V 93A TO-263AB	对比
	FDB6670AL	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 30V 80A D2PAK	对比