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IPD65R1K0CEAUMA1备选型号: IPD65R950CFDATMA1

IPD65R1K0CEAUMA1

Infineon Technologies

MOSFET N-CH 650V TO-252

6 Weeks
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
SILICON
7.2A Tc
-55°C~150°C TJ
Tape & Reel (TR)
CoolMOS™
2013
yes
活跃
1 (Unlimited)
2
EAR99
SINGLE
鸥翼
未说明
未说明
R-PSSO-G2
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
DRAIN
N-Channel
SWITCHING
1 Ω @ 1.5A, 10V
3.5V @ 200μA
无卤素
328pF @ 100V
15.3nC @ 10V
±20V
7.2A
650V
1Ohm
12A
50 mJ
超级交界处
ROHS3 Compliant
含铅
-
-
-
-
-
-
-
-
IPD65R950CFDATMA1

Infineon Technologies

Trans MOSFET N-CH 650(Min)V 3.9A 3-Pin TO-252 T/R

18 Weeks
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
SILICON
3.9A Tc
-55°C~150°C TJ
Tape & Reel (TR)
CoolMOS™
2006
-
活跃
1 (Unlimited)
2
-
SINGLE
鸥翼
未说明
未说明
R-PSSO-G2
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
DRAIN
N-Channel
SWITCHING
950m Ω @ 1.5A, 10V
4.5V @ 200μA
-
380pF @ 100V
14.1nC @ 10V
±20V
3.9A
650V
0.95Ohm
11A
50 mJ
-
ROHS3 Compliant
-
3
HIGH RELIABILITY
9 ns
6.5ns
13.8 ns
TO-252AA
20V
700V
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图片	产品型号	品牌	分类	封装	描述	对比
	IPD65R950C6ATMA1	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; PG-TO252-3	对比
	IPD65R950CFDATMA1	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	Trans MOSFET N-CH 650(Min)V 3.9A 3-Pin TO-252 T/R	对比
	STD9HN65M2	STMicroelectronics	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	MOSFET N-CH 650V 5.5A DPAK	对比