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IPD70R950CEAUMA1备选型号: STD9HN65M2

IPD70R950CEAUMA1

Infineon Technologies

MOSFET N-CH 700V 7.4A TO252-3

18 Weeks
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
SILICON
7.4A Tc
-40°C~150°C TJ
Tape & Reel (TR)
CoolMOS™
2013
e3
yes
活跃
3 (168 Hours)
2
EAR99
Tin (Sn)
SINGLE
鸥翼
not_compliant
R-PSSO-G2
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
DRAIN
N-Channel
SWITCHING
950m Ω @ 1.5A, 10V
3.5V @ 150μA
无卤素
328pF @ 100V
15.3nC @ 10V
±20V
7.4A
700V
0.95Ohm
12A
50 mJ
超级交界处
ROHS3 Compliant
含铅
-
-
-
-
-
-
STD9HN65M2

STMicroelectronics

MOSFET N-CH 650V 5.5A DPAK

-
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
-
60W Tc
150°C TJ
Cut Tape (CT)
MDmesh™ M2
-
-
-
活跃
1 (Unlimited)
-
-
-
-
-
-
-
-
-
-
N-Channel
-
820mOhm @ 2.5A, 10V
4V @ 250μA
-
325pF @ 100V
11.5nC @ 10V
±25V
5.5A
-
-
-
-
-
ROHS3 Compliant
-
NRND (Last Updated: 8 months ago)
DPAK
STD9H
650V
325pF
820 mΩ
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	IPD60R750E6ATMA1	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	Trans MOSFET N-CH 600V 5.7A 3-Pin(2 Tab) TO-252	对比
	STD9HN65M2	STMicroelectronics	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	MOSFET N-CH 650V 5.5A DPAK	对比
	NDD60N900U1T4G	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	MOSFET N-CH 600V 5.9A DPAK-3	对比