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IS42RM32160E-75BL备选型号: IS42VM32160D-75BLI

IS42RM32160E-75BL

ISSI, Integrated Silicon Solution Inc

DRAM 512M, 2.5V, 133Mhz 16Mx32 Mobile SDR

12 Weeks
表面贴装
表面贴装
90-TFBGA
90
Volatile
120mA
0°C~70°C TA
Tray
活跃
3 (168 Hours)
90
AUTO/SELF REFRESH
2.5V
BOTTOM
1
0.8mm
80mA
512Mb 16M x 32
1
SYNCHRONOUS
133MHz
6ns
DRAM
Parallel
32b
16MX32
32
15b
512 Mb
3V
2.3V
13mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS42VM32160D-75BLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 512M-Bit 16Mx32 1.8V 90-Pin WBGA

12 Weeks
表面贴装
表面贴装
90-TFBGA
90
Volatile
100mA
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
90
AUTO/SELF REFRESH
1.8V
BOTTOM
1
0.8mm
-
512Mb 16M x 32
1
-
133MHz
6ns
DRAM
Parallel
32b
16MX32
32
15b
512 Mb
1.95V
1.7V
13mm
1.2mm
ROHS3 Compliant
Copper, Silver, Tin
e1
yes
EAR99
锡银铜
8542.32.00.28
260
40
3-STATE
0.00001A
COMMON
8192
1248FP
1248
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43LR32160C-6BL	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM 512M, 1.8V, 166Mhz Mobile DDR	对比
	IS42VM32160D-75BLI	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM Chip SDRAM 512M-Bit 16Mx32 1.8V 90-Pin WBGA	对比