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IS42S16320B-7BL备选型号: IS42S16160G-7BLI

IS42S16320B-7BL

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 512Mbit 32Mx16 3.3V 54-Pin WBGA

54-TFBGA
表面贴装
表面贴装
54
Volatile
Tray
0°C~70°C TA
e1
yes
Obsolete
3 (168 Hours)
54
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
AUTO/SELF REFRESH
3V~3.6V
BOTTOM
260
1
3.3V
0.8mm
10
54
3.3V
3.6V
3V
512Mb 32M x 16
1
150mA
150mA
143MHz
5.4ns
DRAM
Parallel
16b
32MX16
3-STATE
15b
512 Mb
0.004A
COMMON
8192
800μm
13mm
11mm
符合RoHS标准
无
-
-
-
-
-
-
-
IS42S16160G-7BLI

ISSI, Integrated Silicon Solution Inc

DRAM 256M 16Mx16 143Mhz SDR SDRAM, 3.3V

54-TFBGA
表面贴装
表面贴装
54
Volatile
Tray
-40°C~85°C TA
e1
-
活跃
3 (168 Hours)
54
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
AUTO/SELF REFRESH
3V~3.6V
BOTTOM
260
1
3.3V
0.8mm
10
54
3.3V
3.6V
3V
256Mb 16M x 16
1
130mA
-
143MHz
5.4ns
DRAM
Parallel
16b
16MX16
3-STATE
15b
256 Mb
0.004A
COMMON
8192
-
8mm
-
ROHS3 Compliant
无
6 Weeks
16
1248FP
1248
1.2mm
无SVHC
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16160G-7BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM 256M 16Mx16 143Mhz SDR SDRAM, 3.3V	对比
	IS42S16400J-7BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA	对比
	71V416L15BEG	Integrated Device Technology (IDT)	存储器	TFBGA	SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 15ns 48-Pin CABGA Tube/Tray	对比