登录 / 注册

产品

输入型号/关键词

IS43DR81280B-3DBL备选型号: IS66WVC4M16ALL-7010BLI

IS43DR81280B-3DBL

ISSI, Integrated Silicon Solution Inc

DRAM 1G (128Mx8) 333MHz 1.8v DDR2 SDRAM

8 Weeks
表面贴装
表面贴装
60-TFBGA
60
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
60
EAR99
AUTO/SELF REFRESH
8542.32.00.32
1.7V~1.9V
BOTTOM
1
1.8V
0.8mm
不合格
1.8V
1.9V
1.7V
1Gb 128M x 8
1
220mA
SYNCHRONOUS
333MHz
450ps
DRAM
Parallel
8b
128MX8
3-STATE
8
15ns
17b
1 Gb
COMMON
8192
48
48
10.5mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
IS66WVC4M16ALL-7010BLI

ISSI, Integrated Silicon Solution Inc

SRAM 64Mb 1.54M x 16 70ns Pseudo SRAM

-
表面贴装
表面贴装
54-VFBGA
54
Volatile
-40°C~85°C TA
Tray
Discontinued
3 (168 Hours)
54
3A991.B.2.A
-
-
1.7V~1.95V
BOTTOM
1
1.8V
0.75mm
-
-
1.95V
1.7V
64Mb 4M x 16
-
-
-
-
-
PSRAM
Parallel
-
4MX16
3-STATE
16
70ns
-
-
COMMON
-
-
-
8mm
1mm
ROHS3 Compliant
e1
yes
Tin/Silver/Copper (Sn/Ag/Cu)
260
40
54
1.8V
0.00001A
67108864 bit
70 ns
6mm
无
无铅
添加型号

集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	N02L63W3AB25IT	ON Semiconductor	存储器	48-LFBGA	IC SRAM 2M PARALLEL 48BGA	对比
	IS66WVC4M16ALL-7010BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-VFBGA	SRAM 64Mb 1.54M x 16 70ns Pseudo SRAM	对比
	N02L63W3AB25I	ON Semiconductor	存储器	48-LFBGA	IC SRAM 2M PARALLEL 48BGA	对比