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IS43R16800E-5TL备选型号: MT46V64M8TG-5B:J

IS43R16800E-5TL

ISSI, Integrated Silicon Solution Inc

DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM

8 Weeks
表面贴装
表面贴装
66-TSSOP (0.400, 10.16mm Width)
66
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
66
AUTO/SELF REFRESH
2.3V~2.7V
DUAL
1
2.5V
0.65mm
不合格
2.5V
2.7V
2.3V
128Mb 8M x 16
1
240mA
SYNCHRONOUS
200MHz
700ps
DRAM
Parallel
16b
8MX16
3-STATE
16
15ns
14b
128 Mb
0.003A
COMMON
4096
248
248
22.22mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
MT46V64M8TG-5B:J

Micron Technology Inc.

DRAM Chip DDR SDRAM 512M-Bit 64Mx8 2.6V 66-Pin TSOP

-
-
表面贴装
66-TSSOP (0.400, 10.16mm Width)
66
Volatile
0°C~70°C TA
Bulk
Obsolete
3 (168 Hours)
66
AUTO/SELF REFRESH
2.5V~2.7V
DUAL
1
2.6V
0.65mm
-
2.6V
2.7V
2.5V
512Mb 64M x 8
1
-
-
200MHz
700ps
DRAM
Parallel
8b
64MX8
3-STATE
8
15ns
15b
512 Mb
0.005A
COMMON
8192
248
248
22.22mm
1.2mm
Non-RoHS Compliant
YES
2011
EAR99
8542.32.00.28
66
400MHz
无
含铅
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	IS43R16160D-6TLI	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM 256M (16Mx16) 166MHz 2.5v DDR SDRAM	对比