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IS43R32400E-5BL备选型号: 71V35761SA166BQGI

IS43R32400E-5BL

ISSI, Integrated Silicon Solution Inc

DRAM 128M (4Mx32) 200MHz 2.5v DDR SDRAM

8 Weeks
表面贴装
表面贴装
144-LFBGA
144
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
144
AUTO/SELF REFRESH
2.3V~2.7V
BOTTOM
1
2.5V
0.8mm
不合格
2.5V
2.7V
2.3V
128Mb 4M x 32
1
240mA
SYNCHRONOUS
200MHz
700ps
DRAM
Parallel
32b
4MX32
3-STATE
32
15ns
14b
128 Mb
0.005A
COMMON
4096
248
248
12mm
1.4mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V35761SA166BQGI

Integrated Device Technology (IDT)

SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.5ns 165-Pin FBGA

11 Weeks
表面贴装
-
FBGA
165
166MHz
-
-
活跃
3 (168 Hours)
165
流水线结构
-
BOTTOM
1
3.3V
-
-
3.3V
-
-
512kB
1
330mA
-
-
3.5 ns
-
-
-
-
3-STATE
-
-
17b
4.5 Mb
0.035A
COMMON
-
-
-
15mm
-
符合RoHS标准
2009
e1
yes
Tin/Silver/Copper (Sn/Ag/Cu)
85°C
-40°C
BALL
260
166MHz
30
165
INDUSTRIAL
Parallel
3.465V
3.135V
Synchronous
36b
13mm
1.2mm
无
无铅
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	IS61NLP25636A-200B3I	ISSI, Integrated Silicon Solution Inc	存储器	165-TFBGA	IC SRAM 9M PARALLEL 165TFBGA	对比
	71V35761SA166BQGI	Integrated Device Technology (IDT)	存储器	FBGA	SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.5ns 165-Pin FBGA	对比
	71V3577S75BQG	Integrated Device Technology (IDT)	存储器	FBGA	SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 7.5ns 165-Pin FBGA Tube/Tray	对比