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IS43R32400E-5BL备选型号: IS61NLP25636A-200B3I

IS43R32400E-5BL

ISSI, Integrated Silicon Solution Inc

DRAM 128M (4Mx32) 200MHz 2.5v DDR SDRAM

8 Weeks
表面贴装
表面贴装
144-LFBGA
144
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
144
AUTO/SELF REFRESH
2.3V~2.7V
BOTTOM
1
2.5V
0.8mm
不合格
2.5V
2.7V
2.3V
128Mb 4M x 32
1
240mA
SYNCHRONOUS
200MHz
700ps
DRAM
Parallel
32b
4MX32
3-STATE
32
15ns
14b
128 Mb
0.005A
COMMON
4096
248
248
12mm
1.4mm
ROHS3 Compliant
-
-
-
-
-
-
-
IS61NLP25636A-200B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 165TFBGA

-
-
表面贴装
165-TFBGA
165
Volatile
-40°C~85°C TA
Tray
最后一次购买
2 (1 Year)
165
流水线结构
3.135V~3.465V
BOTTOM
1
3.3V
1mm
-
3.3V
-
3.135V
9Mb 256K x 36
4
-
-
200MHz
3.1ns
SRAM
Parallel
-
256KX36
3-STATE
36
-
18b
9 Mb
0.05A
COMMON
-
-
-
15mm
1.2mm
Non-RoHS Compliant
YES
e0
no
3A991.B.2.A
Tin/Lead (Sn/Pb)
165
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS61NLP25636A-200B3I	ISSI, Integrated Silicon Solution Inc	存储器	165-TFBGA	IC SRAM 9M PARALLEL 165TFBGA	对比
	71V35761SA166BQGI	Integrated Device Technology (IDT)	存储器	FBGA	SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.5ns 165-Pin FBGA	对比
	71V3577S75BQG	Integrated Device Technology (IDT)	存储器	FBGA	SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 7.5ns 165-Pin FBGA Tube/Tray	对比