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IS49NLC36800-33BL备选型号: 71V35761SA166BGG

IS49NLC36800-33BL

ISSI, Integrated Silicon Solution Inc

DRAM 288Mbit x36 Common I/O 300MHz RLDRAM2

表面贴装
144-TFBGA
YES
144
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
144
EAR99
自动刷新
8542.32.00.28
1.7V~1.9V
BOTTOM
1
1.8V
1mm
144
不合格
1.9V
1.5/1.81.82.5V
1.7V
288Mb 8M x 36
1
SYNCHRONOUS
20ns
DRAM
Parallel
36b
8MX36
3-STATE
36
301989888 bit
300MHz
COMMON
248
18.5mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V35761SA166BGG

Integrated Device Technology (IDT)

SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.5ns 119-Pin BGA

-
BGA
-
119
166MHz
-
-
活跃
3 (168 Hours)
119
-
流水线结构
-
-
BOTTOM
1
3.3V
-
119
-
-
-
-
576kB
1
-
3.5 ns
-
-
-
-
3-STATE
-
-
-
COMMON
-
14mm
2.36mm
符合RoHS标准
7 Weeks
表面贴装
2009
e1
yes
Tin/Silver/Copper (Sn/Ag/Cu)
70°C
0°C
BALL
260
166MHz
30
3.3V
COMMERCIAL
Parallel
3.465V
3.135V
320mA
17b
4.5 Mb
0.03A
Synchronous
36b
22mm
2.15mm
无
无铅
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	IS61LPS25636A-200B3LI	ISSI, Integrated Silicon Solution Inc	存储器	165-TBGA	IC SRAM 9M PARALLEL 165TFBGA	对比
	71V35761SA200BG	Integrated Device Technology (IDT)	存储器	BGA	SRAM 4M 3.3V I/O PBSRM FAST X3	对比
	71V35761SA166BGG	Integrated Device Technology (IDT)	存储器	BGA	SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.5ns 119-Pin BGA	对比