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IS49NLC36800-33BL备选型号: IS61LPS25636A-200B3LI

IS49NLC36800-33BL

ISSI, Integrated Silicon Solution Inc

DRAM 288Mbit x36 Common I/O 300MHz RLDRAM2

表面贴装
144-TFBGA
YES
144
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
144
EAR99
自动刷新
8542.32.00.28
1.7V~1.9V
BOTTOM
1
1.8V
1mm
144
不合格
1.9V
1.5/1.81.82.5V
1.7V
288Mb 8M x 36
1
SYNCHRONOUS
20ns
DRAM
Parallel
36b
8MX36
3-STATE
36
301989888 bit
300MHz
COMMON
248
18.5mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS61LPS25636A-200B3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 165TFBGA

表面贴装
165-TBGA
YES
165
Volatile
-40°C~85°C TA
Tray
活跃
2 (1 Year)
165
3A991.B.2.A
流水线结构
-
3.135V~3.465V
BOTTOM
1
3.3V
1mm
165
-
-
-
3.135V
9Mb 256K x 36
4
-
3.1ns
SRAM
Parallel
-
256KX36
3-STATE
36
-
-
COMMON
-
15mm
1.2mm
ROHS3 Compliant
12 Weeks
e1
yes
Tin/Silver/Copper (Sn/Ag/Cu)
260
40
3.3V
275mA
200MHz
18b
9 Mb
0.105A
Synchronous
36b
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS61LPS25636A-200B3LI	ISSI, Integrated Silicon Solution Inc	存储器	165-TBGA	IC SRAM 9M PARALLEL 165TFBGA	对比
	71V35761SA200BG	Integrated Device Technology (IDT)	存储器	BGA	SRAM 4M 3.3V I/O PBSRM FAST X3	对比
	71V35761SA166BGG	Integrated Device Technology (IDT)	存储器	BGA	SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.5ns 119-Pin BGA	对比