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IS61LF51236B-6.5TQLI-TR备选型号: 71V30L35TFGI

IS61LF51236B-6.5TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 100LQFP

12 Weeks
通孔
表面贴装
100-LQFP
Volatile
-40°C~85°C TA
Tape & Reel (TR)
yes
活跃
3 (168 Hours)
100
FLOW-THROUGH
3.3V
QUAD
未说明
1
0.65mm
未说明
R-PQFP-G100
18Mb 512K x 36
133MHz
6.5ns
SRAM
Parallel
512KX36
36
18874368 bit
3.465V
3.135V
20mm
1.6mm
14mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V30L35TFGI

Integrated Device Technology (IDT)

SRAM Chip Async Dual 3.3V 8K-Bit 1K x 8 35ns 64-Pin STQFP

7 Weeks
表面贴装
-
LQFP
RAM, SDR, SRAM
-
Bulk
yes
活跃
3 (168 Hours)
64
-
3.3V
QUAD
260
1
0.5mm
30
-
1kB
-
35 ns
-
-
1KX8
-
-
3.6V
3V
10mm
-
10mm
符合RoHS标准
64
145mA
2009
e3
EAR99
Matte Tin (Sn) - annealed
85°C
-40°C
FLAT
INDUSTRIAL
Parallel
2
3-STATE
20b
8 kb
COMMON
Asynchronous
8b
3V
1.4mm
无
无铅
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	71V30L35TFGI	Integrated Device Technology (IDT)	存储器	LQFP	SRAM Chip Async Dual 3.3V 8K-Bit 1K x 8 35ns 64-Pin STQFP	对比