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IS66WVC2M16ALL-7010BLI备选型号: CY62147EV30LL-45BVXI

IS66WVC2M16ALL-7010BLI

ISSI, Integrated Silicon Solution Inc

IC PSRAM 32M PARALLEL 54VFBGA

表面贴装
54-VFBGA
YES
54
Volatile
-40°C~85°C TA
Tray
e1
yes
Discontinued
3 (168 Hours)
54
3A991.B.2.A
锡银铜
它还可运行同步突发模式
1.8V
BOTTOM
260
1
0.75mm
40
不合格
1.8V
32Mb 2M x 16
ASYNCHRONOUS
PSRAM
Parallel
2MX16
3-STATE
16
70ns
0.00015A
70 ns
COMMON
1.95V
1.7V
8mm
1mm
6mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CY62147EV30LL-45BVXI

Cypress Semiconductor Corp

IC, SRAM, 4MBIT, PARALLEL, 45NS, BGA-48

表面贴装
48-VFBGA
-
48
Volatile
-40°C~85°C TA
Tray
e1
yes
活跃
3 (168 Hours)
48
-
Tin/Silver/Copper (Sn/Ag/Cu)
-
3V
BOTTOM
260
1
0.75mm
30
-
-
4Mb 256K x 16
-
SRAM
Parallel
-
3-STATE
16
45ns
0.000007A
45 ns
COMMON
3.6V
2.2V
8mm
-
-
ROHS3 Compliant
6 Weeks
表面贴装
20mA
MoBL®
2001
45GHz
CY62147
1
18b
4 Mb
Asynchronous
16b
无SVHC
无
无铅
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	IS42S16800F-7BL	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TFBGA	对比
	CY62147EV30LL-45BVXI	Cypress Semiconductor Corp	存储器	48-VFBGA	IC, SRAM, 4MBIT, PARALLEL, 45NS, BGA-48	对比
	IS66WVC4M16ALL-7010BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-VFBGA	SRAM 64Mb 1.54M x 16 70ns Pseudo SRAM	对比