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STGB3NC120HDT4备选型号: IRG4BH20K-SPBF

STGB3NC120HDT4

STMicroelectronics

IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast

ACTIVE (Last Updated: 6 months ago)
8 Weeks
Tin
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
2.000002g
SILICON
D2Pak
1.2kV
2.3V
-55°C~150°C TJ
Tape & Reel (TR)
PowerMESH™
e3
活跃
1 (Unlimited)
2
EAR99
低导通损耗
75W
鸥翼
245
30
STGB3
R-PSSO-G2
Single
75W
COLLECTOR
Standard
15 ns
电源控制
N-CHANNEL
1.2kV
14A
51 ns
1200V
1.2kV
18.5 ns
2.8V @ 15V, 3A
150°C
14A
680 ns
24nC
20A
15ns/118ns
236μJ (on), 290μJ (off)
4.83mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
IRG4BH20K-SPBF

Infineon Technologies

IGBT 1200V 11A 60W D2PAK

-
9 Weeks
-
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
-
SILICON
-
1.2kV
3.17V
-55°C~150°C TJ
Tube
-
e3
最后一次购买
1 (Unlimited)
2
EAR99
低导通损耗
60W
鸥翼
260
30
-
R-PSSO-G2
Single
60W
COLLECTOR
Standard
-
MOTOR CONTROL
N-CHANNEL
4.3V
11A
-
1200V
-
51 ns
4.3V @ 15V, 5A
-
-
720 ns
28nC
22A
23ns/93ns
450μJ (on), 440μJ (off)
4.83mm
无
ROHS3 Compliant
Contains Lead, Lead Free
2000
Matte Tin (Sn) - with Nickel (Ni) barrier
1.2kV
11A
26ns
20V
6.5V
400ns
10.67mm
9.65mm
无SVHC
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图片	产品型号	品牌	分类	封装	描述	对比
	FGB7N60UNDF	ON Semiconductor	晶体管 - IGBT - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	IGBT Transistors 600V 7A NPT IGBT	对比
	IRG4BH20K-SPBF	Infineon Technologies	晶体管 - IGBT - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	IGBT 1200V 11A 60W D2PAK	对比
	STGBL6NC60DT4	STMicroelectronics	晶体管 - IGBT - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	IGBT 600V 14A 56W D2PAK	对比